| PART |
Description |
Maker |
| SUM16N20-125 |
N-Channel 200-V (D-S) 175C MOSFET
|
http://
VISAY[Vishay Siliconix]
|
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| BSP121 |
N-channel enhancement mode vertical D-MOS transistor 0.35 A, 200 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SUD50M02-12P SUD50N02-12P |
N-Channel 20-V (D0S) 175C MOSFET
N-Channel 20-V (D-S) 175-LC MOSFET
N - CHANNEL 20 - V ( D -S ) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
| 2SJ56709 2SJ567 2SJ5672-7J1B |
2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
|
Toshiba Semiconductor
|
| SUM110N05-06L |
N-Channel 55-V (D-S) 175C MOSFET
|
VISHAY
|
| SUP85N04-03 SUB85N04-03 |
N-Channel 40-V (D-S) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
|
